Invention Grant
US09401374B2 Pixel structure, dual gate pixel structure and display device 有权
像素结构,双栅像素结构和显示设备

Pixel structure, dual gate pixel structure and display device
Abstract:
According to the present disclosure, there are disclosed a pixel structure, a dual-gate pixel structure and a display device. The pixel structure comprises: a thin film transistor, a passivation layer that is located over the thin film transistor, an upper pixel electrode that is located over the passivation layer, a lower pixel electrode that is located under a gate insulating layer of the thin film transistor; and a common voltage line that is located between the passivation layer and the gate insulating layer. The common voltage line overlaps with the lower pixel electrode and the upper pixel electrode at least in part with the gate insulating layer and the passivation layer interposed therebetween, respectively, so as to form a storage capacitance.
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