Invention Grant
- Patent Title: Pixel structure, dual gate pixel structure and display device
- Patent Title (中): 像素结构,双栅像素结构和显示设备
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Application No.: US13995455Application Date: 2013-03-15
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Publication No.: US09401374B2Publication Date: 2016-07-26
- Inventor: Shijun Wang , Hailin Xue , Chuncheng Che
- Applicant: Beijing BOE Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BEIJING BOE OPTOELECTRONICS
- Current Assignee: BEIJING BOE OPTOELECTRONICS
- Current Assignee Address: CN Beijing
- Priority: CN201220224642U 20120517
- International Application: PCT/CN2013/072762 WO 20130315
- International Announcement: WO2013/170657 WO 20131121
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/12 ; G02F1/1362

Abstract:
According to the present disclosure, there are disclosed a pixel structure, a dual-gate pixel structure and a display device. The pixel structure comprises: a thin film transistor, a passivation layer that is located over the thin film transistor, an upper pixel electrode that is located over the passivation layer, a lower pixel electrode that is located under a gate insulating layer of the thin film transistor; and a common voltage line that is located between the passivation layer and the gate insulating layer. The common voltage line overlaps with the lower pixel electrode and the upper pixel electrode at least in part with the gate insulating layer and the passivation layer interposed therebetween, respectively, so as to form a storage capacitance.
Public/Granted literature
- US20140145197A1 Pixel Structure, Dual Gate Pixel Structure And Display Device Public/Granted day:2014-05-29
Information query
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