Invention Grant
US09401384B2 Method of preparing self-aligned isolation regions between sensor elements
有权
在传感器元件之间制备自对准隔离区域的方法
- Patent Title: Method of preparing self-aligned isolation regions between sensor elements
- Patent Title (中): 在传感器元件之间制备自对准隔离区域的方法
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Application No.: US14877986Application Date: 2015-10-08
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Publication No.: US09401384B2Publication Date: 2016-07-26
- Inventor: Shih-Chi Fu , Kai Tzeng , Wen-Chen Lu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: H01L21/331
- IPC: H01L21/331 ; H01L21/02 ; H01L27/148 ; H01L21/762 ; H01L27/146 ; H01L31/18
Abstract:
A method of preparing self-aligned isolation regions between two neighboring sensor elements on a substrate includes patterning an oxide layer to form an opening between the two neighboring sensor elements on the substrate. The method further includes performing a first implant to form a deep doped region between the two neighboring sensor elements, wherein a top portion of the deep doped region is below a top surface of the substrate. The method further includes performing a second implant to form a shallow doped region between the two neighboring sensor elements, wherein a bottom portion of the shallow doped region overlaps with the top portion of the deep doped region.
Public/Granted literature
- US20160027839A1 METHOD OF PREPARING SELF-ALIGNED ISOLATION REGIONS BETWEEN SENSOR ELEMENTS Public/Granted day:2016-01-28
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