Invention Grant
US09401395B2 Decoupling MIM capacitor designs for interposers and methods of manufacture thereof
有权
用于插入件的去耦MIM电容器设计及其制造方法
- Patent Title: Decoupling MIM capacitor designs for interposers and methods of manufacture thereof
- Patent Title (中): 用于插入件的去耦MIM电容器设计及其制造方法
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Application No.: US15017059Application Date: 2016-02-05
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Publication No.: US09401395B2Publication Date: 2016-07-26
- Inventor: Kuo-Chyuan Tzeng , Kuo-Chi Tu , Chen-Jong Wang , Hsiang-Fan Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L49/02
- IPC: H01L49/02
Abstract:
Decoupling metal-insulator-metal (MIM) capacitor designs for interposers and methods of manufacture thereof are disclosed. In one embodiment, a method of forming a decoupling capacitor includes providing a packaging device, and forming a decoupling MIM capacitor in at least two metallization layers of the packaging device.
Public/Granted literature
- US20160155700A1 Decoupling MIM Capacitor Designs for Interposers and Methods of Manufacture Thereof Public/Granted day:2016-06-02
Information query
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