Invention Grant
US09401415B2 Fin field effect transistor (FinFET) device and method for forming the same
有权
Fin场效应晶体管（FinFET）器件及其形成方法
- Patent Title: Fin field effect transistor (FinFET) device and method for forming the same
- Patent Title (中): Fin场效应晶体管（FinFET）器件及其形成方法
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Application No.: US14181320Application Date: 2014-02-14
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Publication No.: US09401415B2Publication Date: 2016-07-26
- Inventor: Che-Cheng Chang , Chang-Yin Chen , Jr-Jung Lin , Chih-Han Lin , Yung-Jung Chang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/66 ; H01L29/78 ; H01L29/165
Abstract:
Embodiments for forming a fin field effect transistor (FinFET) device structure are provided. The FinFET device structure includes a fin structure extending above a substrate and a gate dielectric layer formed over the fin structure. The FinFET device structure also includes a gate electrode formed on the gate dielectric layer. The FinFET device structure further includes a number of gate spacers formed on sidewalls of the gate electrode. The gate spacers are in direct contact with the fin structure.
Public/Granted literature
- US20150236132A1 FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE AND METHOD FOR FORMING THE SAME Public/Granted day:2015-08-20
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