Invention Grant
- Patent Title: Semiconductor structure and process thereof
- Patent Title (中): 半导体结构及其工艺
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Application No.: US13917623Application Date: 2013-06-13
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Publication No.: US09401429B2Publication Date: 2016-07-26
- Inventor: Chin-Cheng Chien , Chun-Yuan Wu , Chin-Fu Lin , Chih-Chien Liu , Chia-Lin Hsu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/423 ; H01L29/786
Abstract:
A semiconductor structure includes a fin-shaped structure and a gate. The fin-shaped structure is located in a substrate, wherein the fin-shaped structure has a through hole located right below a suspended part. The gate surrounds the suspended part. Moreover, the present invention also provides a semiconductor process including the following steps for forming said semiconductor structure. A substrate is provided. A fin-shaped structure is formed in the substrate, wherein the fin-shaped structure has a bottom part and a top part. A part of the bottom part is removed to form a suspended part in the corresponding top part, thereby forming the suspended part over a through hole. A gate is formed to surround the suspended part.
Public/Granted literature
- US20140367779A1 SEMICONDUCTOR STRUCTURE AND PROCESS THEREOF Public/Granted day:2014-12-18
Information query
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