Invention Grant
- Patent Title: Semiconductor device and electronic device
- Patent Title (中): 半导体器件和电子器件
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Application No.: US14593227Application Date: 2015-01-09
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Publication No.: US09401432B2Publication Date: 2016-07-26
- Inventor: Yoshiyuki Kobayashi , Daisuke Matsubayashi
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2014-005618 20140116
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L29/786 ; H01L27/12

Abstract:
A semiconductor device of one embodiment of the present invention includes a semiconductor, an insulator, a first conductor, and a second conductor. In the semiconductor device, a top surface of the semiconductor has a region in contact with the insulator; a side surface of the semiconductor has a region in contact with the insulator; the first conductor has a first region overlapping with the semiconductor with the insulator positioned therebetween; the first region has a region in contact with the top surface of the semiconductor and a region in contact with the side surface of the semiconductor; the second conductor has a second region in contact with the semiconductor; and the first region and the second region do not overlap with each other.
Public/Granted literature
- US20150200305A1 SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE Public/Granted day:2015-07-16
Information query
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