Provided is a reconfigurable electronic device which is implemented by forming independent upper gates and lower gates, wherein in comparison with an existing reconfigurable electronic device having the same function, a degree of integration is greatly increased, a non-volatile memory function is included in the device, and in operation of a reconfigurable circuit based on an independent lower electrode array, dynamic parasitic component is decreased and a complexity of wire lines can be reduced, so that power consumption can be reduced. In addition, in comparison with an existing reconfigurable electronic device, the device exhibits remarkably excellent performance in terms of various characteristics such as diversity of functions of a multi-functional device, alignment margin in process, performance of implementation of infinitesimal electrical doping in a channel, compatibility with bottom-up and top-down method in process, and compatibility with a 1D or 2D material.