Invention Grant
- Patent Title: Silicon solar cell and method of manufacturing the same
- Patent Title (中): 硅太阳能电池及其制造方法
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Application No.: US12276592Application Date: 2008-11-24
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Publication No.: US09401446B2Publication Date: 2016-07-26
- Inventor: Junyong Ahn , Gyeayoung Kwag , Juhwa Cheong
- Applicant: Junyong Ahn , Gyeayoung Kwag , Juhwa Cheong
- Applicant Address: KR Seoul
- Assignee: LG ELECTRONICS INC.
- Current Assignee: LG ELECTRONICS INC.
- Current Assignee Address: KR Seoul
- Agency: KED & Associates, LLP
- Priority: KR10-2008-0108669 20081104
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L21/00 ; H01L31/068 ; H01L31/18

Abstract:
A silicon solar cell and a method of manufacturing the same are disclosed. The silicon solar cell includes a silicon semiconductor substrate doped with first conductive impurities, an emitter layer doped with second conductive impurities having polarities opposite polarities of the first conductive impurities on the substrate, an anti-reflective layer on an entire surface of the substrate, an upper electrode that passes through the anti-reflective layer and is connected to the emitter layer, and a lower electrode connected to a lower portion of the substrate. The emitter layer includes a first emitter layer heavily doped with the second conductive impurities and a second emitter layer lightly doped with the second conductive impurities. A surface resistance of the second emitter layer is 100 Ohm/sq to 120 Ohm/sq.
Public/Granted literature
- US20100108129A1 SILICON SOLAR CELL AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-05-06
Information query
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