Invention Grant
- Patent Title: P-side layers for short wavelength light emitters
- Patent Title (中): 用于短波长发光体的P侧层
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Application No.: US13619598Application Date: 2012-09-14
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Publication No.: US09401452B2Publication Date: 2016-07-26
- Inventor: John E. Northrup , Bowen Cheng , Christopher L. Chua , Thomas Wunderer , Noble M. Johnson , Zhihong Yang
- Applicant: John E. Northrup , Bowen Cheng , Christopher L. Chua , Thomas Wunderer , Noble M. Johnson , Zhihong Yang
- Applicant Address: US CA Palo Alto
- Assignee: PALO ALTO RESEARCH CENTER INCORPORATED
- Current Assignee: PALO ALTO RESEARCH CENTER INCORPORATED
- Current Assignee Address: US CA Palo Alto
- Agency: Hollingsworth Davis, LLC
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/06 ; H01L33/14 ; H01L33/32 ; H01L21/02 ; B82Y20/00 ; H01S5/042 ; H01S5/20 ; H01S5/32 ; H01S5/343 ; H01S5/30 ; H01S5/34
Abstract:
A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow≦xhigh≦0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN.
Public/Granted literature
- US20140231745A1 P-SIDE LAYERS FOR SHORT WAVELENGTH LIGHT EMITTERS Public/Granted day:2014-08-21
Information query
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