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Invention Grant
US09401454B2 Semiconducting structure with switchable emission zones, method of manufacturing such a structure and semiconducting device comprising such a structure 有权
具有可切换发射区的半导体结构，制造这种结构的方法和包括这种结构的半导体器件

Semiconducting structure with switchable emission zones, method of manufacturing such a structure and semiconducting device comprising such a structure
Abstract:
The invention relates to a semiconducting structure intended to emit light, comprising a first semiconducting region (10) with a first type of conductivity, and a second semiconducting region (20) with a second type of conductivity, at least on a portion (220, 210), so as to form a junction semiconducting with the first region (10). This second region (20) has at least a first portion (210) in contact with the first region (10), this first portion (210) comprising at least one first and one second carrier confinement zone (211, 212). The structure (1) comprises at least a first means of polarizing the first portion (210) adapted to apply direct first external polarization to the first portion (210) in order to modify the distribution of carriers of at least one type of conductivity in the first portion (210) relative to the first and second confinement zones (211, 212). The invention also relates to a method of manufacturing a semiconducting structure (1) and a device comprising at least such a structure (1).
Abstract(Chinese):

本发明涉及一种旨在发光的半导体结构，包括具有第一类型导电性的第一半导体区域（10）和具有第二类型导电性的第二半导体区域（20），至少在一部分（220， 210），以便与第一区域（10）形成半导体结。 该第二区域（20）至少具有与第一区域（10）接触的第一部分（210），该第一部分（210）包括至少一个第一和第二载体限制区（211,212）。 结构（1）至少包括使适于对第一部分（210）施加直接的第一外部极化的第一部分（210）的极化的第一装置，以便改变在第一部分（210）中的至少一种类型的导电性的载流子的分布 第一部分（210）相对于第一和第二限制区（211,212）。 本发明还涉及制造半导体结构（1）的方法和至少包括这种结构（1）的装置。

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