Invention Grant
- Patent Title: Method for forming current diffusion layer in light emitting diode device and method for fabricating the same
- Patent Title (中): 在发光二极管器件中形成电流扩散层的方法及其制造方法
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Application No.: US14101210Application Date: 2013-12-09
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Publication No.: US09401457B2Publication Date: 2016-07-26
- Inventor: Wanshi Chen , Wang Zhang
- Applicant: BYD Company Limited
- Applicant Address: CN Shenzhen
- Assignee: BYD Company Limited
- Current Assignee: BYD Company Limited
- Current Assignee Address: CN Shenzhen
- Agency: Alston & Bird LLP
- Priority: CN201110163904 20110617
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/00 ; H01L21/44 ; H01L21/4763 ; H01L33/42 ; C23C14/30 ; C23C14/08 ; H01L31/0224 ; H01L21/02 ; H01L33/22
Abstract:
A method of forming a current diffusion layer is provided that comprises providing an epitaxial wafer. The method further comprises depositing ITO source material on the epitaxial wafer to form a base ITO layer by a direct current electron gun and depositing ZnO source material, during simultaneous deposition of the ITO source material, on the base ITO layer to form a ZnO doped ITO layer by a pulse current electron gun. The ZnO source material is deposited at a deposition rate higher than the rate at which the ITO source material is deposited. Generation and termination of current may be controlled by adjusting a duty cycle of pulse current provided by the pulse current electron gun and result in discontinuous deposition of the ZnO source material. The method further comprises depositing the ITO source material on the ZnO doped ITO layer to cover the ZnO doped ITO layer and form a finished ITO layer.
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