Invention Grant
- Patent Title: Compact RRAM structure with contact-less unit cell
- Patent Title (中): 紧凑型RRAM结构，无接触式单元
-
Application No.: US13682661Application Date: 2012-11-20
-
Publication No.: US09401473B2Publication Date: 2016-07-26
- Inventor: Shyue Seng Tan , Eng Huat Toh , Elgin Quek
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Horizon IP Pte. Ltd.
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24
Abstract:
A RRAM device having a diode device structure coupled to a variable resistance layer is disclosed. The diode device structure can either be embedded into or fabricated over the substrate. A memory device having an array of said RRAM devices can be fabricated with multiple common bit lines and common word lines.
Public/Granted literature
- US20140138603A1 COMPACT RRAM STRUCTURE WITH CONTACT-LESS UNIT CELL Public/Granted day:2014-05-22
Information query
IPC分类:
