Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US14243523Application Date: 2014-04-02
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Publication No.: US09401602B2Publication Date: 2016-07-26
- Inventor: Daisuke Matsuoka
- Applicant: PANASONIC CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SOCIONEXT INC.
- Current Assignee: SOCIONEXT INC.
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2011-222253 20111006
- Main IPC: H02H3/22
- IPC: H02H3/22 ; H02H9/04 ; H01L23/522 ; H01L27/06 ; H01L27/02 ; H02H3/20 ; H03K19/00

Abstract:
An ESD protection circuit includes a resistive element, a capacitive element, a protecting element, and a controller. The resistive element, the protecting element, and the controller are provided in an element formation layer. At least part of the capacitive element includes an interconnect capacitor provided in a plurality of interconnect layers. When viewed in plan, at least part of a capacitance formation region in which the interconnect capacitor is provided overlaps at least part of an element formation region in which the resistive element, the protecting element, and the controller are provided.
Public/Granted literature
- US20140211357A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2014-07-31
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