Invention Grant
- Patent Title: Temperature dependent amplifier biasing
- Patent Title (中): 温度依赖放大器偏置
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Application No.: US14158318Application Date: 2014-01-17
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Publication No.: US09401680B2Publication Date: 2016-07-26
- Inventor: Jungdong Park , Cheng-Han Wang , Hong Sun Kim , Mohammad Bagher Vahid Far
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, PC
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F1/30 ; H03F3/193 ; H03F3/195 ; H03F3/24

Abstract:
An apparatus includes a first bias circuit configured to generate a first current that varies with temperature according to a first slope. The apparatus also includes a second bias circuit configured to generate a second current that varies with temperature according to a second slope. The apparatus further includes a low noise amplifier including a transconductance stage that is responsive to an output of the first bias circuit. The apparatus also includes a load coupled to an output of the low noise amplifier and responsive to an output of the second bias circuit.
Public/Granted literature
- US20150207466A1 Temperature Dependent Amplifier Biasing Public/Granted day:2015-07-23
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