Invention Grant
- Patent Title: Semiconductor amplifier
- Patent Title (中): 半导体放大器
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Application No.: US14801227Application Date: 2015-07-16
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Publication No.: US09401681B2Publication Date: 2016-07-26
- Inventor: Kazutaka Takagi
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P
- Priority: JP2014-182365 20140908
- Main IPC: H03F3/191
- IPC: H03F3/191 ; H03F1/30 ; H03F3/193 ; H03F1/56 ; H03F3/195

Abstract:
A semiconductor amplifier includes a semiconductor amplifying element, an output terminal, an output matching circuit, and an output bias circuit. The output matching circuit includes a bonding wire, a first transmission line, and a second transmission line. The other end part of the first transmission line is connected to one end part of the second transmission line. The output bias circuit includes a third transmission line having an electrical length of approximately 90° at a center frequency, a grounded shunt capacitor, and a power supply terminal. The third transmission line includes one end part and the other end part connected to the grounded shunt capacitor. The one end part of the third transmission line is connected to the second transmission line at a position where an electrical length is approximately 45° from the one end part of the second transmission line at the center frequency.
Public/Granted literature
- US20160072450A1 SEMICONDUCTOR AMPLIFIER Public/Granted day:2016-03-10
Information query
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