Invention Grant
- Patent Title: Active diode having improved transistor turn-off control method
- Patent Title (中): 有源二极管具有改进的晶体管截止控制方法
-
Application No.: US14893219Application Date: 2014-04-25
-
Publication No.: US09401710B2Publication Date: 2016-07-26
- Inventor: Jong-Tae Hwang , Hyun-Ick Shin , Sang-O Jeon , Joon Rhee
- Applicant: MAPS, INC.
- Applicant Address: KR Yongin-si
- Assignee: MAPS, Inc.
- Current Assignee: MAPS, Inc.
- Current Assignee Address: KR Yongin-si
- Agency: NSIP Law
- Priority: KR10-2013-0063577 20130603
- International Application: PCT/KR2014/003690 WO 20140425
- International Announcement: WO2014/196737 WO 20141211
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K3/00 ; H03K17/687 ; H03K5/13 ; H03K5/24 ; H03K5/00

Abstract:
An active diode that features improved control of transistor turn-off is provided. Such an active diode may include a comparator to compare voltages between opposite ends of a parasitic diode, and a gate driver to control a gate terminal of the transistor according to the comparison result of the comparator. Furthermore, the active diode may further include an off-timing controller to control the transistor to be turned off at a point in time when voltages of the opposite ends of the parasitic diode turn positive. Thus, the active diode may be turned off when required.
Public/Granted literature
- US20160105172A1 ACTIVE DIODE HAVING IMPROVED TRANSISTOR TURN-OFF CONTROL METHOD Public/Granted day:2016-04-14
Information query