Invention Grant
- Patent Title: Deposition device
- Patent Title (中): 沉积装置
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Application No.: US13634314Application Date: 2011-03-08
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Publication No.: US09404180B2Publication Date: 2016-08-02
- Inventor: Masamichi Hara , Kaoru Yamamoto , Atsushi Gomi , Satoshi Taga
- Applicant: Masamichi Hara , Kaoru Yamamoto , Atsushi Gomi , Satoshi Taga
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Abelman, Frayne & Schwab
- Priority: JP2010-059963 20100316; JP2010-220385 20100930
- International Application: PCT/JP2011/055319 WO 20110308
- International Announcement: WO2011/114940 WO 20110922
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/16 ; C23C16/44 ; H01L21/285

Abstract:
The disclosed deposition device for forming a thin film using a starter gas comprising an organic metal compound is provided with: a processing container 22; a mounting platform 28 which has a heater 34 for heating the workpiece W; a gas introduction mechanism 80 which introduces the starter gas toward the area more exterior than the outer peripheral end of the workpiece W on the mounting platform 28; an internal partition wall 90 which is disposed such that the lower end of said processing space contacts the mounting platform 28 to form gas outlets 92 between the lower portion of the space and the edges of the mounting platform 28; and a orifice forming member 96 which extends radially inward toward the mounting platform 28 and forms an orifice 98 communicating with the gas outlet 92.
Public/Granted literature
- US20130000558A1 DEPOSITION DEVICE Public/Granted day:2013-01-03
Information query
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