Invention Grant
- Patent Title: Plasma enhanced atomic layer deposition system
- Patent Title (中): 等离子体增强原子层沉积系统
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Application No.: US13412675Application Date: 2012-03-06
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Publication No.: US09404181B2Publication Date: 2016-08-02
- Inventor: Bo-Heng Liu , Chi-Chung Kei , Meng-Yen Tsai , Wen-Hao Cho , Chih-Chieh Yu , Chien-Nan Hsiao , Da-Ren Liu
- Applicant: Bo-Heng Liu , Chi-Chung Kei , Meng-Yen Tsai , Wen-Hao Cho , Chih-Chieh Yu , Chien-Nan Hsiao , Da-Ren Liu
- Applicant Address: TW Hsinchu
- Assignee: NATIONAL APPLIED RESEARCH LABORATORIES
- Current Assignee: NATIONAL APPLIED RESEARCH LABORATORIES
- Current Assignee Address: TW Hsinchu
- Agent Chun-Ming Shih
- Priority: TW100126276A 20110726
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C16/455

Abstract:
A plasma enhanced atomic layer deposition (PEALD) system used to form thin films on substrates includes a plasma chamber, a processing chamber, two or more ring units and a control piece. The plasma chamber includes an outer and an inner quartz tubular units, whose central axes are aligned with each other. Therefore, plasma is held and concentrated in an annular space formed between the outer and outer quartz tubular units. Due to the first and second through holes, the plasma flow may be more evenly distributed on most of the surface of the substrate to form evenly distributed thin films and nano particles on the substrate. In addition, due to the alignment and misalignment between the first and second through holes, the plasma generated in the plasma chamber may be swiftly allowed or disallowed to enter to the processing chamber to prevent the precursor from forming a CVD.
Public/Granted literature
- US20130125815A1 PLASMA ENHANCED ATOMIC LAYER DEPOSITION SYSTEM Public/Granted day:2013-05-23
Information query
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