Invention Grant
- Patent Title: Ultra-sensitive radiation dosimeters
- Patent Title (中): 超敏感辐射剂量计
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Application No.: US13611162Application Date: 2012-09-12
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Publication No.: US09405017B2Publication Date: 2016-08-02
- Inventor: Yu-Ming Lin , Jeng-Bang Yau
- Applicant: Yu-Ming Lin , Jeng-Bang Yau
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Scully Scott Murphy and Presser
- Agent Frank Digiglio
- Main IPC: G01T1/24
- IPC: G01T1/24 ; G01T1/02 ; H01L31/119 ; H01L29/16 ; H01L31/18 ; H01L51/00 ; H01L51/42

Abstract:
A method of forming a transistor comprises forming a conducting substrate layer, forming a dielectric layer over the conducting substrate layer, forming a channel over at least a portion of the dielectric layer and forming first and second source/drain regions contacting respective first and second portions of the channel. The channel comprises a thin-film carbon material. The conducting substrate layer, the dielectric layer, the channel and the first and second source/drain regions are formed such that exposure to radiation causes a change in a threshold voltage of the transistor.
Public/Granted literature
- US20150369925A1 ULTRA-SENSITIVE RADIATION DOSIMETERS Public/Granted day:2015-12-24
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