Invention Grant
- Patent Title: Method to define multiple layer patterns with a single exposure by charged particle beam lithography
- Patent Title (中): 通过带电粒子束光刻法单次曝光来定义多层图案的方法
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Application No.: US14747054Application Date: 2015-06-23
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Publication No.: US09405195B2Publication Date: 2016-08-02
- Inventor: Yen-Cheng Lu , Chih-Tsung Shih , Jeng-Horng Chen , Shinn-Sheng Yu , Anthony Yen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F7/095 ; G03F7/36 ; G03F1/78 ; H01L21/027 ; H01L21/311 ; H01L21/768 ; H01L21/033
Abstract:
The present disclosure provides a method that includes forming a first patternable material layer on a substrate; forming a second patternable material layer over the first patternable material layer; and performing a charged particle beam lithography exposure process to the first patternable material layer and the second patternable material layer, thereby forming a first latent feature in the first patternable material layer and a second latent feature in the second patternable material layer.
Public/Granted literature
- US20150287596A1 Method to Define Multiple Layer Patterns with a Single Exposure by Charged Particle Beam Lithography Public/Granted day:2015-10-08
Information query
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