Invention Grant
- Patent Title: AF-mode STO with negative Hk spin polarization layer
- Patent Title (中): 具有负Hk自旋极化层的AF模式STO
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Application No.: US14179358Application Date: 2014-02-12
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Publication No.: US09406315B2Publication Date: 2016-08-02
- Inventor: Masato Shiimoto , Masukaza Igarashi , Keiichi Nagasaka , Yo Sato
- Applicant: HGST Netherlands B.V.
- Applicant Address: NL Amsterdam
- Assignee: HGST Netherlands B.V.
- Current Assignee: HGST Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Patterson & Sheridan, LLP
- Main IPC: G11B5/235
- IPC: G11B5/235 ; G11B5/31 ; G11B5/127 ; G11B5/00

Abstract:
The embodiments disclosed generally relate to an STO structure for a magnetic head. The STO structure has an FGL having a greater thickness than the SPL. The SPL may have multiple layers. In one embodiment, a MAMR head comprises a main pole; a trailing shield; and an STO coupled between the main pole and the trailing shield. The STO includes: a first magnetic layer having a first thickness; a non-magnetic spacer layer coupled to the first magnetic layer; and a second magnetic layer having a second thickness and coupled to the non-magnetic spacer layer, wherein the first thickness is greater than the second thickness, wherein a current is charged from the first magnetic layer to the second magnetic layer, and wherein a vertical magnetic anisotropy field of the second magnetic film is less than 0 kOe.
Public/Granted literature
- US20150228295A1 AF-MODE STO WITH NEGATIVE HK SPIN POLARIZATION LAYER Public/Granted day:2015-08-13
Information query
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