Invention Grant
US09406379B2 Resistive random access memory with non-linear current-voltage relationship
有权
具有非线性电流 - 电压关系的电阻随机存取存储器
- Patent Title: Resistive random access memory with non-linear current-voltage relationship
- Patent Title (中): 具有非线性电流 - 电压关系的电阻随机存取存储器
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Application No.: US13733843Application Date: 2013-01-03
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Publication No.: US09406379B2Publication Date: 2016-08-02
- Inventor: Sung Hyun Jo , Kuk-Hwan Kim
- Applicant: Crossbar, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: CROSSBAR, INC.
- Current Assignee: CROSSBAR, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Amin, Turocy & Watson, LLP
- Main IPC: H01L45/00
- IPC: H01L45/00 ; G11C13/00
Abstract:
Providing for fabrication, construction, and/or assembly of a resistive random access memory (RRAM) cell is described herein. The RRAM cell can exhibit a non-linear current-voltage relationship. When arranged in a memory array architecture, these cells can significantly mitigate sneak path issues associated with conventional RRAM arrays.
Public/Granted literature
- US20140185358A1 RESISTIVE RANDOM ACCESS MEMORY WITH NON-LINEAR CURRENT-VOLTAGE RELATIONSHIP Public/Granted day:2014-07-03
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