Invention Grant
US09406380B2 Electronic device 有权
电子设备

Electronic device
Abstract:
Provided is an electronic device including a semiconductor memory unit. The semiconductor memory unit may include: a storage cell comprising a variable resistance element; a first selecting element coupled to one end of the storage cell and having a threshold voltage set to a first voltage; and a second selecting element coupled to the other end of the storage cell and having a threshold voltage set to a second voltage higher than the first voltage.
Public/Granted literature
Information query
Patent Agency Ranking
0/0