The present invention proposes a single poly EEPROM cell including a first control gate capacitor, a first tunnel gate capacitor, a first sense transistor, and a first selection transistor. In a single poly EEPROM cell according to the present invention, a Fowler Nordheim (FN) tunneling method is used in order to increase the recognition distance of an RFID tag chip in mode. In a single poly EEPROM device including a single poly EEPROM cell, the single poly EEPROM cell includes a first control gate capacitor MC1, a first tunnel gate capacitor MC2, a first sense transistor MN1, and a first selection transistor MN2, and the first sense transistor MN1 and the first selection transistor MN2 share a P type well PW.