One-time programmable (OTP) memory comprises a layer of a first conductivity type formed in an active area in a region of a second conductivity type and gate polysilicon of a second conductivity type. Gate polysilicon and said layer of the first conductivity type act as the word line and the bit line. Each bit cell is picked up by a metal bit line. Contact between the metal bit line and said layer of the first conductivity type can be ohmic or rectifying. Said layer of the first conductivity type, said region of the second conductivity type and the contact, ohmic or rectifying, are formed by using process steps available from a standard manufacturing process.