Invention Grant
US09406447B2 Method for patterning mesoporous inorganic oxide film, and electric device including mesoporous inorganic oxide film patterned by the same
有权
介孔无机氧化物膜的图案化方法，以及包含由其构图的介孔无机氧化物膜的电气装置
- Patent Title: Method for patterning mesoporous inorganic oxide film, and electric device including mesoporous inorganic oxide film patterned by the same
- Patent Title (中): 介孔无机氧化物膜的图案化方法，以及包含由其构图的介孔无机氧化物膜的电气装置
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Application No.: US13935469Application Date: 2013-07-03
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Publication No.: US09406447B2Publication Date: 2016-08-02
- Inventor: Eun Kyoung Kim , Jong Hak Kim , Jeong Hun Kim , Jong Kwan Koh , Jong Beom Na , Chi Hyun Park
- Applicant: Industry-Academic Cooperation Foundation, Yonsei University
- Applicant Address: KR
- Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
- Current Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
- Current Assignee Address: KR
- Priority: KR10-2012-0072844 20120704
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01G9/20 ; H01L29/78 ; H01G9/00 ; H01L51/05
Abstract:
Provided are a method for patterning a mesoporous inorganic oxide film, the method including a step of forming a mesoporous inorganic oxide film using a composition containing inorganic oxide particles; and a step of forming a pattern on the mesoporous inorganic oxide film using an elastic stamp for pattern formation, and then calcining the mesoporous inorganic oxide, and an electronic device including a mesoporous inorganic oxide film that has been patterned by the patterning method.
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