Invention Grant
- Patent Title: Energy storage devices with at least one porous polycrystalline substrate
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Application No.: US14688937Application Date: 2015-04-16
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Publication No.: US09406450B2Publication Date: 2016-08-02
- Inventor: Eric C. Hannah
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01G9/00
- IPC: H01G9/00 ; H01G11/84 ; H01G11/28 ; H01G11/36 ; H01G11/68 ; H01G11/24 ; H01G11/26 ; H01G11/30 ; H01G11/86
Abstract:
In one embodiment, a structure for a energy storage device may include at one polycrystalline substrate. The grain size may be designed to be at least a size at which phonon scattering begins to dominate over grain boundary scattering in the polycrystalline substrate. The structure also includes a porous structure containing multiple channels within the polycrystalline substrate.
Public/Granted literature
- US20150294803A1 ENERGY STORAGE DEVICES WITH AT LEAST ONE POROUS POLYCRYSTALLINE SUBSTRATE Public/Granted day:2015-10-15
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