Invention Grant
- Patent Title: Enhanced photoelectron sources using electron bombardment
- Patent Title (中): 使用电子轰击的增强型光电子源
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Application No.: US14190835Application Date: 2014-02-26
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Publication No.: US09406488B2Publication Date: 2016-08-02
- Inventor: Juan R. Maldonado , Yao-Te Cheng , Piero Pianetta , R. Fabian W. Pease , Lambertus Hesselink
- Applicant: The Board of Trustees of the Leland Stanford Junior University
- Applicant Address: US CA Palo Alto
- Assignee: The Board of Trustees of the Leland Stanford Junior University
- Current Assignee: The Board of Trustees of the Leland Stanford Junior University
- Current Assignee Address: US CA Palo Alto
- Agency: Lumen Patent Firm
- Main IPC: G09G1/28
- IPC: G09G1/28 ; H01J29/51 ; H01J40/14 ; H01J40/18
Abstract:
A method of achieving heightened quantum efficiencies and extended photocathode lifetimes is provided that includes using an electron beam bombardment to activate color centers in a CsBr film of a photocathode, and using a laser source for pumping electrons in the color centers of the photocathode.
Public/Granted literature
- US20140265828A1 Enhanced photoelectron sources using electron bombardment Public/Granted day:2014-09-18
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