Invention Grant
US09406534B2 Wet clean process for cleaning plasma processing chamber components
有权
用于清洁等离子体处理室部件的湿清洁工艺
- Patent Title: Wet clean process for cleaning plasma processing chamber components
- Patent Title (中): 用于清洁等离子体处理室部件的湿清洁工艺
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Application No.: US14525118Application Date: 2014-10-27
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Publication No.: US09406534B2Publication Date: 2016-08-02
- Inventor: Armen Avoyan , Kennet Baylon
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Martine Penilla Group, LLP
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/67 ; H01L21/02 ; B08B3/08
Abstract:
A system and method of cleaning a plasma processing chamber component includes removing the component from the plasma processing chamber, the removed component including a material deposited on the surface of the component. A heated oxidizing solution is applied to the material deposited on the component to oxidize a first portion deposited material. A stripping solution is applied to the component to remove the oxidized first portion of the deposited material. An etching solution is applied to remove a second portion of the deposited material and the cleaned component can be rinsed and dried.
Public/Granted literature
- US20160079096A1 Wet Clean Process for Cleaning Plasma Processing Chamber Components Public/Granted day:2016-03-17
Information query
IPC分类:
