Invention Grant
- Patent Title: Planarization process
- Patent Title (中): 平面化过程
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Application No.: US14647393Application Date: 2012-12-20
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Publication No.: US09406549B2Publication Date: 2016-08-02
- Inventor: Huilong Zhu , Jun Luo , Chunlong Li , Jian Deng , Chao Zhao
- Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Christensen Fonder P.A.
- Priority: CN201210505860 20121130
- International Application: PCT/CN2012/087020 WO 20121220
- International Announcement: WO2014/082357 WO 20140605
- Main IPC: H01L21/321
- IPC: H01L21/321 ; H01L21/265 ; H01L21/3105 ; H01L21/762 ; H01L29/10 ; H01L29/66 ; H01L21/308 ; H01L21/311 ; H01L21/8234 ; H01L21/3213
Abstract:
A planarization process, the process including performing first sputtering on a material layer, with an area of the material layer which has a relatively low loading condition for sputtering shielded by a first shielding layer, removing the first shielding layer, and performing second sputtering on the material layer to planarize the material layer.
Public/Granted literature
- US20150325452A1 PLANARIZATION PROCESS Public/Granted day:2015-11-12
Information query
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