Invention Grant
US09406552B2 Semiconductor device having conductive via and manufacturing process
有权
具有导电通孔和制造工艺的半导体器件
- Patent Title: Semiconductor device having conductive via and manufacturing process
- Patent Title (中): 具有导电通孔和制造工艺的半导体器件
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Application No.: US13721599Application Date: 2012-12-20
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Publication No.: US09406552B2Publication Date: 2016-08-02
- Inventor: Yung-Jen Chen , Yi-Chuan Ding , Min-Lung Huang
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW
- Agency: Stetina Brunda Garred & Brucker
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L23/498 ; H01L21/48 ; H01L23/538 ; H01L23/00

Abstract:
In accordance with the present invention, there is provided a semiconductor device comprising a semiconductor die or chip, a package body and a through package body via. The semiconductor chip includes a plurality of conductive pads. The package body encapsulates a sidewall of the semiconductor chip, and has at least one hole formed therein having a sidewall which is of a prescribed first surface roughness value. The through package body via is disposed in the hole of the package body and comprises a dielectric material and at least one conductive interconnection metal. The dielectric material is disposed on the sidewall of the hole and defines at least one bore having a sidewall which is of a second surface roughness value less than the first surface roughness value. The interconnection metal is disposed within the bore.
Public/Granted literature
- US20140175663A1 SEMICONDUCTOR DEVICE HAVING CONDUCTIVE VIA AND MANUACTURING PROCESS Public/Granted day:2014-06-26
Information query
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