Invention Grant
- Patent Title: Method of making an interconnect device
- Patent Title (中): 制造互连设备的方法
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Application No.: US14046555Application Date: 2013-10-04
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Publication No.: US09406556B2Publication Date: 2016-08-02
- Inventor: Artur Kolics
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: H01L21/3105
- IPC: H01L21/3105 ; B08B3/04 ; C11D7/08 ; C11D7/32 ; H01L21/768 ; C11D7/22

Abstract:
A semiconductor system includes: providing a dielectric layer; providing a conductor in the dielectric layer, the conductor exposed at the top of the dielectric layer; capping the exposed conductor; and modifying the surface of the dielectric layer, modifying the surface of the dielectric layer, wherein modifying the surface includes cleaning conductor ions from the dielectric layer by dissolving the conductor in a low pH solution, dissolving the dielectric layer under the conductor ions, mechanically enhanced cleaning, or chemisorbing a hydrophobic layer on the dielectric layer.
Public/Granted literature
- US20140099789A1 METHOD OF MAKING AN INTERCONNECT DEVICE Public/Granted day:2014-04-10
Information query
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