Methods for fabricating an integrated circuit are provided herein. In an embodiment, a method for fabricating an integrated circuit includes forming a gate electrode structure overlying a semiconductor substrate. A first sacrificial oxide layer is formed overlying the semiconductor substrate and a first implant mask is patterned overlying the first sacrificial oxide layer to expose a portion of the first sacrificial oxide layer adjacent the gate electrode structure. Conductivity determining ions are implanted into the semiconductor substrate, through the first sacrificial oxide layer. The first implant mask and the first sacrificial oxide layer are removed after implanting the conductivity determining ions into the semiconductor substrate.