Invention Grant
US09406568B2 Semiconductor structure containing low-resistance source and drain contacts
有权
包含低电阻源极和漏极触点的半导体结构
- Patent Title: Semiconductor structure containing low-resistance source and drain contacts
- Patent Title (中): 包含低电阻源极和漏极触点的半导体结构
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Application No.: US14550409Application Date: 2014-11-21
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Publication No.: US09406568B2Publication Date: 2016-08-02
- Inventor: Injo Ok , Balasubramanian Pranatharthiharan , Charan Veera Venkata Satya Surisetty
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Steven J. Meyers
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8238 ; H01L21/28 ; H01L21/283 ; H01L27/092 ; H01L29/66
Abstract:
Semiconductor structures having a source contact and a drain contact that exhibit reduced contact resistance and methods of forming the same are disclosed. In one embodiment of the present application, the reduced contact resistance is provided by forming a layer of a dipole metal or metal-insulator-semiconductor (MIS) oxide between an epitaxial semiconductor material (providing the source region and the drain region of the device) and an overlying metal semiconductor alloy. In yet other embodiment, the reduced contact resistance is provided by increasing the area of the source region and drain region by patterning the epitaxial semiconductor material that constitutes at least an upper portion of the source region and drain region of the device.
Public/Granted literature
- US20160148846A1 SEMICONDUCTOR STRUCTURE CONTAINING LOW-RESISTANCE SOURCE AND DRAIN CONTACTS Public/Granted day:2016-05-26
Information query
IPC分类:
