Invention Grant
US09406569B2 Semiconductor device having diffusion barrier to reduce back channel leakage
有权
具有扩散阻挡层的半导体器件减少反向沟道泄漏
- Patent Title: Semiconductor device having diffusion barrier to reduce back channel leakage
- Patent Title (中): 具有扩散阻挡层的半导体器件减少反向沟道泄漏
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Application No.: US14519493Application Date: 2014-10-21
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Publication No.: US09406569B2Publication Date: 2016-08-02
- Inventor: Gregory G. Freeman , Kam Leung Lee , Chengwen Pei , Geng Wang , Yanli Zhang
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Yuanmin Cai
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/78 ; H01L21/84 ; H01L21/265 ; H01L29/66 ; H01L27/12 ; H01L29/786 ; H01L29/06 ; H01L21/324 ; H01L21/762
Abstract:
A semiconductor-on-insulator (SOI) substrate comprises a bulk semiconductor substrate, a buried insulator layer formed on the bulk substrate and an active semiconductor layer formed on the buried insulator layer. Impurities are implanted near the interface of the buried insulator layer and the active semiconductor layer. A diffusion barrier layer is formed between the impurities and an upper surface of the active semiconductor layer. The diffusion barrier layer prevents the impurities from diffusing therethrough.
Public/Granted literature
- US20150056760A1 SEMICONDUCTOR DEVICE HAVING DIFFUSION BARRIER TO REDUCE BACK CHANNEL LEAKAGE Public/Granted day:2015-02-26
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