Invention Grant
- Patent Title: Method for manufacturing semiconductor device including inline inspection
- Patent Title (中): 包括在线检查的半导体器件的制造方法
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Application No.: US14486221Application Date: 2014-09-15
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Publication No.: US09406571B2Publication Date: 2016-08-02
- Inventor: Takuya Yoshida , Kazutoyo Takano
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2014-017218 20140131
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/78 ; H01L21/304

Abstract:
A method for manufacturing a semiconductor device includes: forming a semiconductor wafer including a plurality of semiconductor devices sandwiching a dicing region and an inline inspection monitor arranged in the dicing region; after forming the semiconductor wafer, conducting an inline inspection of the semiconductor device by using the inline inspection monitor; and after the inline inspection, dicing the semiconductor wafer along the dicing region to separate the semiconductor devices individually. The step of forming the semiconductor wafer includes: simultaneously forming a first diffusion layer of the semiconductor device and a second diffusion layer of the inline inspection monitor; forming a metal layer on the first and second diffusion layer; and at least partly removing the metal layer on the second diffusion layer. When the semiconductor wafer is diced, a portion from which the metal layer has been removed is cut by a dicing blade on the second diffusion layer.
Public/Granted literature
- US20150221564A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2015-08-06
Information query
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