Invention Grant
- Patent Title: Stack memory
- Patent Title (中): 堆栈内存
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Application No.: US14891635Application Date: 2014-05-12
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Publication No.: US09406652B2Publication Date: 2016-08-02
- Inventor: Sang Wook Ahn , Huy Chan Jung , Yong Woon Lee , Do Young Lee , Heui-Gyun Ahn
- Applicant: SILICONFILE TECHNOLOGIES INC.
- Applicant Address: KR Gyeonggi-do
- Assignee: SILICONFILE TECHNOLOGIES INC.
- Current Assignee: SILICONFILE TECHNOLOGIES INC.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2013-0055176 20130515
- International Application: PCT/KR2014/004207 WO 20140512
- International Announcement: WO2014/185669 WO 20141120
- Main IPC: G11C5/06
- IPC: G11C5/06 ; H01L25/065 ; H01L23/528 ; G11C7/06 ; G11C7/10

Abstract:
A semiconductor memory is formed by stacking a plurality of substrates and memory cells on each substrate are connected by data dump lines. A switch may intervene between the memory cell and the data dump line. When data of each substrate is dumped by the data dump line, a problem of decrease in a speed and an increase in power consumption due to a parasitic component can be minimized. Further, a core circuit including the memory cell may be disposed on one substrate and a peripheral circuit unit may be disposed on the remaining substrates.
Public/Granted literature
- US20160133603A1 STACK MEMORY Public/Granted day:2016-05-12
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