Invention Grant
US09406661B2 Protection circuit including vertical gallium nitride schottky diode and PN junction diode
有权
保护电路包括垂直氮化镓肖特基二极管和PN结二极管
- Patent Title: Protection circuit including vertical gallium nitride schottky diode and PN junction diode
- Patent Title (中): 保护电路包括垂直氮化镓肖特基二极管和PN结二极管
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Application No.: US14632352Application Date: 2015-02-26
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Publication No.: US09406661B2Publication Date: 2016-08-02
- Inventor: TingGang Zhu , Anup Bhalla , Ping Huang , Yueh-Se Ho
- Applicant: Alpha and Omega Semiconductor Incorporated
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agency: Van Pelt, Yi & James LLP
- Main IPC: H01L25/18
- IPC: H01L25/18 ; H01L29/66 ; H01L29/872 ; H01L29/861 ; H01L29/20 ; H01L29/40 ; H01L23/00
Abstract:
A circuit includes a vertical conduction gallium nitride-based Schottky diode and a vertical conduction silicon based PN junction diode connected in parallel. The Schottky diode and the PN junction diode are packaged in the same semiconductor package and the PN junction diode does not conduct in response to the Schottky diode being forward biased. In some embodiments, the silicon based PN junction diode has a breakdown voltage lower than a breakdown voltage of the gallium nitride-based Schottky diode. The silicon based PN junction diode enters breakdown in response to the gallium nitride-based Schottky diode being reverse biased to divert a reverse bias avalanche current away from the gallium nitride-based Schottky diode.
Public/Granted literature
- US20150228729A1 PROTECTION CIRCUIT INCLUDING VERTICAL GALLIUM NITRIDE SCHOTTKY DIODE AND SCHOTTKY DIODE Public/Granted day:2015-08-13
Information query
IPC分类:
