Invention Grant
US09406671B2 Capacitor arrays for minimizing gradient effects and methods of forming the same
有权
用于最小化梯度效应的电容器阵列及其形成方法
- Patent Title: Capacitor arrays for minimizing gradient effects and methods of forming the same
- Patent Title (中): 用于最小化梯度效应的电容器阵列及其形成方法
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Application No.: US14302471Application Date: 2014-06-12
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Publication No.: US09406671B2Publication Date: 2016-08-02
- Inventor: Chi-Feng Huang , Chia-Chung Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L27/01 ; H01L27/02 ; H01L49/02 ; H01L23/522

Abstract:
Semiconductor devices having capacitor arrays. A semiconductor device is formed including a capacitor array formed in a plurality of cells in a two-dimensional grid. The capacitor array includes a plurality of operational capacitors formed in a first subset of the plurality of cells along a diagonal of the capacitor array. A first operational capacitor is formed in a cell at a first edge of the capacitor array and at a first edge of the diagonal of the capacitor array. The capacitor array also includes a plurality of dummy patterns formed about the plurality of operational capacitors in the capacitor array in a second subset of the plurality of cells to achieve symmetry in the grid about the diagonal. Each one of the plurality of operational capacitors is electrically coupled to another one of the plurality of operational capacitors.
Public/Granted literature
- US20140291806A1 CAPACITOR ARRAYS FOR MINIMIZING GRADIENT EFFECTS AND METHODS OF FORMING THE SAME Public/Granted day:2014-10-02
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