Invention Grant
US09406674B2 Integrated III-nitride D-mode HFET with cascoded pair half bridge
有权
具有级联双桥半桥的III型氮化物D模HFET
- Patent Title: Integrated III-nitride D-mode HFET with cascoded pair half bridge
- Patent Title (中): 具有级联双桥半桥的III型氮化物D模HFET
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Application No.: US14326333Application Date: 2014-07-08
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Publication No.: US09406674B2Publication Date: 2016-08-02
- Inventor: Michael A. Briere
- Applicant: International Rectifier Corporation
- Applicant Address: US CA El Segundo
- Assignee: Infineon Technologies Americas Corp.
- Current Assignee: Infineon Technologies Americas Corp.
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H03K17/10 ; H03K17/22 ; H03K17/567 ; H01L27/06 ; H01L25/07
Abstract:
There are disclosed herein various implementations of a group III-V power conversion circuit including a monolithically integrated half bridge having a depletion mode III-Nitride field-effect transistor (FET), and a normally OFF composite cascoded switch including a depletion mode III-Nitride FET and an enhancement mode group IV FET. In one exemplary implementation, the monolithically integrated half bridge includes a high side depletion mode III-Nitride FET having an enable switch coupled in the conduction path of the high side depletion mode III-Nitride FET.
Public/Granted literature
- US20150014698A1 Integrated III-Nitride D-Mode HFET with Cascoded Pair Half Bridge Public/Granted day:2015-01-15
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