Device and method for forming a device are presented. The method includes providing a substrate prepared with at least a memory cell region having first and second sub-regions and a logic region having input/output (I/O) region and core region. First voltage memory cell is formed in the first sub-region and second voltage memory cell is formed in the second sub-region of the memory cell region of the same substrate. The first voltage memory cell operates in a first voltage and the second voltage memory cell operates in a second voltage which is higher than the first voltage. Each of the first and second voltage memory cells includes a split gate having first and second gates. The first gate is a storage gate having a control gate over a floating gate and the second gate is a wordline. Logic I/O device is formed in the I/O region and logic core device is formed in the core region.