Invention Grant
- Patent Title: Infrared reflection/absorption layer for reducing ghost image of infrared reflection noise and image sensor using the same
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Application No.: US14876296Application Date: 2015-10-06
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Publication No.: US09406716B2Publication Date: 2016-08-02
- Inventor: Wei-Feng Lin , Yeh-An Chien , Chun-Sheng Fan
- Applicant: OmniVision Technologies, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Lathrop & Gage LLP
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L27/146

Abstract:
An image sensor includes a photosensing element for receiving infrared (IR) radiation and detecting the IR radiation and generating an electrical signal indicative of the IR radiation. A redistribution layer (RDL) is disposed under the photosensing element, the RDL comprising pattern of conductors for receiving the electrical signal. An IR reflection layer, an IR absorption layer or an isolation layer is disposed between the photosensing element and the RDL. The IR reflection layer, IR absorption layer or isolation layer provides a barrier to IR radiation such that the IR radiation does not impinge upon the RDL. As a result, a ghost image of the RDL is not generated, resulting in reduced noise and improved sensitivity and performance of the image sensor.
Public/Granted literature
Information query
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