Invention Grant
- Patent Title: Inductive structure formed using through silicon vias
- Patent Title (中): 使用硅通孔形成的感应结构
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Application No.: US13187234Application Date: 2011-07-20
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Publication No.: US09406738B2Publication Date: 2016-08-02
- Inventor: Vassili Kireev , James Karp
- Applicant: Vassili Kireev , James Karp
- Applicant Address: US CA San Jose
- Assignee: XILINX, INC.
- Current Assignee: XILINX, INC.
- Current Assignee Address: US CA San Jose
- Agent Kevin T. Cuenot; Gerald Chan
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L25/16 ; H01L27/08 ; H01L49/02 ; H01L23/14 ; H01L23/498 ; H01L23/522 ; H01L23/64 ; H01L25/065 ; H01L23/00
Abstract:
An inductor for an integrated circuit can include a first turn comprising a first through silicon via (TSV) coupled to a second TSV. The inductor can include a third TSV coupled to the second TSV.
Public/Granted literature
- US20130020675A1 INDUCTIVE STRUCTURE FORMED USING THROUGH SILICON VIAS Public/Granted day:2013-01-24
Information query
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