Invention Grant
US09406749B2 Method of manufacturing a horizontal gate-all-around transistor having a fin
有权
制造具有翅片的水平栅极全向晶体管的方法
- Patent Title: Method of manufacturing a horizontal gate-all-around transistor having a fin
- Patent Title (中): 制造具有翅片的水平栅极全向晶体管的方法
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Application No.: US14504506Application Date: 2014-10-02
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Publication No.: US09406749B2Publication Date: 2016-08-02
- Inventor: Chia-Cheng Tai , Chun-Liang Tai
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/66 ; H01L29/06 ; H01L29/786 ; H01L21/306 ; H01L21/02
Abstract:
A semiconductor structure includes a substrate and a fin. The fin extends from the substrate and is formed with a hole therethrough. The hole is defined by a confronting pair of wall parts. One of the wall parts is more arcuate than the other of the wall parts. A method for fabricating the semiconductor structure is also disclosed.
Public/Granted literature
- US20160099313A1 SEMICONDUCTOR STRUCTURE FOR A TRANSISTOR AND METHOD FOR FABRICATING THE SAME Public/Granted day:2016-04-07
Information query
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