Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14283415Application Date: 2014-05-21
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Publication No.: US09406756B2Publication Date: 2016-08-02
- Inventor: Yuki Nakano , Ryota Nakamura
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2013-107350 20130521
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/16 ; H01L29/872 ; H01L21/04 ; H01L21/324 ; H01L29/78
Abstract:
A semiconductor-device manufacturing method of the present invention includes a step of selectively implanting impurity ions into a surface of an SiC semiconductor layer and forming impurity regions and a step of activating the impurity ions by annealing the SiC semiconductor layer at a temperature of 1400° C. or more when the surface of the SiC semiconductor layer is covered with an insulating film.
Public/Granted literature
- US20140346529A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE Public/Granted day:2014-11-27
Information query
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