Invention Grant
US09406757B2 Semiconductor device and method of manufacturing semiconductor device 有权
半导体装置及其制造方法

Semiconductor device and method of manufacturing semiconductor device
Abstract:
The semiconductor device according to the present invention includes: a semiconductor layer of a first conductivity type made of SiC having an Si surface; a gate trench dug down from the surface of the semiconductor layer; a gate insulating film formed on a bottom surface and a side surface of the gate trench so that the ratio of the thickness of a portion located on the bottom surface to the thickness of a portion located on the side surface is 0.3 to 1.0; and a gate electrode embedded in the gate trench through the gate insulating film.
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