Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14493715Application Date: 2014-09-23
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Publication No.: US09406757B2Publication Date: 2016-08-02
- Inventor: Yuki Nakano , Ryota Nakamura
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2008-330318 20081225; JP2008-334480 20081226; JP2009-293362 20091224
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L29/78 ; H01L29/423 ; H01L29/66 ; H01L29/06 ; H01L29/417 ; H01L29/45

Abstract:
The semiconductor device according to the present invention includes: a semiconductor layer of a first conductivity type made of SiC having an Si surface; a gate trench dug down from the surface of the semiconductor layer; a gate insulating film formed on a bottom surface and a side surface of the gate trench so that the ratio of the thickness of a portion located on the bottom surface to the thickness of a portion located on the side surface is 0.3 to 1.0; and a gate electrode embedded in the gate trench through the gate insulating film.
Public/Granted literature
- US20150194492A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2015-07-09
Information query
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