Invention Grant
US09406758B2 Semiconductor devices with sharp gate edges and methods to fabricate same
有权
具有尖锐边缘的半导体器件和制造相同的方法
- Patent Title: Semiconductor devices with sharp gate edges and methods to fabricate same
- Patent Title (中): 具有尖锐边缘的半导体器件和制造相同的方法
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Application No.: US14738906Application Date: 2015-06-14
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Publication No.: US09406758B2Publication Date: 2016-08-02
- Inventor: Iman Rezanezhad Gatabi
- Applicant: Iman Rezanezhad Gatabi
- Applicant Address: US CA San Jose
- Assignee: IMAN REZANEZHAD GATABI
- Current Assignee: IMAN REZANEZHAD GATABI
- Current Assignee Address: US CA San Jose
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L21/00 ; H01L29/20 ; H01L29/778 ; H01L29/423 ; H01L29/06 ; H01L29/10 ; H01L29/15 ; H01L29/8605 ; H01L29/872 ; H01L29/205 ; H01L29/66 ; H01L21/285 ; H01L29/417
Abstract:
This application discloses semiconductor devices with sharp gate edges including 2D and 3D memory cells, High Electron Mobility Transistors and tri-gate transistors. Implementation of a gate with sharp edges may improve the read and write speed and reduce the program and erase voltages in memory cells. It may also improve the gate control over the channel in tri-gate transistors and HEMTs. Methods to fabricate such devices are also disclosed.
Public/Granted literature
- US20150340237A1 Semiconductor Devices with Sharp Gate Edges and Methods to Fabricate Same Public/Granted day:2015-11-26
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