Invention Grant
- Patent Title: High temperature gate replacement process
- Patent Title (中): 高温门更换过程
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Application No.: US14189342Application Date: 2014-02-25
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Publication No.: US09406776B2Publication Date: 2016-08-02
- Inventor: Chung-Shi Liu , Chen-Hua Yu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L21/285 ; H01L29/78 ; H01L29/49 ; H01L29/51
Abstract:
A method for fabricating an integrated circuit device is disclosed. An exemplary method comprises performing a gate replacement process to form a gate structure, wherein the gate replacement process includes an annealing process; after the annealing process, removing portions of a dielectric material layer to form a contact opening, wherein a portion of the substrate is exposed; forming a silicide feature on the exposed portion of the substrate through the contact opening; and filling the contact opening to form a contact to the exposed portion of the substrate.
Public/Granted literature
- US20140175548A1 High Temperature Gate Replacement Process Public/Granted day:2014-06-26
Information query
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