Invention Grant
- Patent Title: Spacer shaper formation with conformal dielectric film for void free PMD gap fill
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Application No.: US14746009Application Date: 2015-06-22
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Publication No.: US09406779B2Publication Date: 2016-08-02
- Inventor: Tom Lii
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L29/66 ; H01L27/092 ; H01L21/8234 ; H01L21/31 ; H01L21/311 ; H01L29/423 ; H01L29/51
Abstract:
An integrated circuit may be formed by removing source/drain spacers from offset spacers on sidewalls of MOS transistor gates, forming a contact etch stop layer (CESL) spacer layer on lateral surfaces of the MOS transistor gates, etching back the CESL spacer layer to form sloped CESL spacers on the lateral surfaces of the MOS transistor gates with heights of ¼ to ¾ of the MOS transistor gates, forming a CESL over the sloped CESL spacers, the MOS transistor gates and the intervening substrate, and forming a PMD layer over the CESL.
Public/Granted literature
- US20150287804A1 SPACER SHAPER FORMATION WITH CONFORMAL DIELECTRIC FILM FOR VOID FREE PMD GAP FILL Public/Granted day:2015-10-08
Information query
IPC分类:
