Invention Grant
US09406799B2 High mobility PMOS and NMOS devices having Si—Ge quantum wells
有权
具有Si-Ge量子阱的高迁移率PMOS和NMOS器件
- Patent Title: High mobility PMOS and NMOS devices having Si—Ge quantum wells
- Patent Title (中): 具有Si-Ge量子阱的高迁移率PMOS和NMOS器件
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Application No.: US14519709Application Date: 2014-10-21
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Publication No.: US09406799B2Publication Date: 2016-08-02
- Inventor: Deepak Kumar Nayak
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/12 ; H01L27/092 ; H01L29/165 ; H01L21/8238 ; H01L21/02
Abstract:
At least one method, apparatus and system disclosed involves semiconductor base structure adapted for accepting at least one of a NMOS device and a PMOS device. A substrate is formed. A strained relaxed layer is formed on the substrate. A first tensile strained layer is formed on the strained relaxed layer. A first compressive strain layer is formed on the first tensile strained layer.
Public/Granted literature
- US20160111539A1 HIGH MOBILITY PMOS AND NMOS DEVICES HAVING Si-Ge QUANTUM WELLS Public/Granted day:2016-04-21
Information query
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